NEW PRODUCT
DMN53D0U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Product Summary
V(BR)DSS 50V
RDS(ON)
2Ω @ VGS = 5V 2.
5Ω @ VGS = 2.
5V
ID TA = +25°C
300 mA
200 mA
Features and Benefits
• N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.
“Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, ma...