Part Number
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IFN112 |
Manufacturer
|
InterFET Corporation |
Description
|
N-Channel JFET |
Published
|
Jul 24, 2016 |
Detailed Description
|
InterFET
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IFN112
IFN112 N-Channel JFET
Features
• InterFET N0132H Geomet...
|
Datasheet
|
IFN112
|
Overview
InterFET
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IFN112
IFN112 N-Channel JFET
Features
• InterFET N0132H Geometry • Low Noise: 1.
5 nV/√Hz Typical • High Gain: 12mS Typical • RoHS Compliant • SMT, TH, and Bare Die Package options.
Applications
• Low-Noise, High Gain • Replacement for Japanese 2SK112
Description
The -50V InterFET IFN112 is a low noise high gain replacement for the Japanese 2SK112 JFET.
Gate leakages are typically less than 50pA at room temperatures.
The TO-18 package is hermetically sealed and suitable for military applications.
Gate/Case Drain 2 Source
TO-18 Bottom View
3
1
Source 1 Drain 2
SOT23 Top View 3 Gate
TO-92 Bottom View
Gate 3 Drain 2 Source 1
Produc...
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