isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Current ID= 45A@ TC=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.
065Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
45
A
PD
Total Dissipation @TC=25℃
278
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
45N20
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