Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡É Operating Temperature Lower Leakage Current : 10 µA (Max.
) @ VDS = 60V Lower RDS(ON) : 0.
097 Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Avalanche Current Repetitive Avalanche Energy O1 O1 Peak Diode Recovery dv/dt Total Power Dissipation (TC=25oC ) Linear Derating Factor O3 ...

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