Part Number
|
IRFWZ24 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Power MOSFET |
Published
|
Aug 3, 2016 |
Detailed Description
|
Advanced Power MOSFET
IRFWZ24
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capa...
|
Datasheet
|
IRFWZ24
|
Overview
Advanced Power MOSFET
IRFWZ24
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 60V ♦ Lower RDS(ON): 0.
050Ω (Typ.
)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy (2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TA=25°C...
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