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Part Number
|
IRLR120N |
|
Manufacturer
|
Fairchild Semiconductor |
|
Description
|
Power MOSFET |
|
Published
|
Aug 4, 2016 |
|
Detailed Description
|
$GYDQFHG 3RZHU 026)(7
IRLR120N
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Cap...
|
|
Datasheet
|
IRLR120N
|
Overview
$GYDQFHG 3RZHU 026)(7
IRLR120N
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 100V ♦ Lower RDS(ON): 0.
176Ω (Typ.
)
BVDSS = 100 V RDS(on) = 0.
22Ω ID = 8.
4 A
D-PAK I-PAK
2
11
3
2 3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery d...
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