Part Number
|
IRFW640A |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Power MOSFET |
Published
|
Aug 4, 2016 |
Detailed Description
|
Advanced Power MOSFET
IRFW/I640A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacit...
|
Datasheet
|
IRFW640A
|
Overview
Advanced Power MOSFET
IRFW/I640A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.
) @ VDS = 200V Lower RDS(ON) : 0.
144 Ω (Typ.
)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy Avalanche Current
Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC) * Total Power Dissipation (TC=25oC) Linear Derating Factor...
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