isc P-Channel MOSFET
Transistor
IRF4905,IIRF4905
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.
02Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-55
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-74
IDM
Drain Current-Single Pulsed
-260
PD
Total Dissipation @TC=25℃
200
Tj
Max.
Operating Junction Temp...