INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF841FI
FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
450 ±20
V V
ID Drain Current-Continuous
4.
5 A
IDM Drain Current-Single Pluse
32 A
PD Total Dissipation @TC=25℃
40 W
TJ Max.
Operating Junction Temperature
150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
...