Part Number D2394
Manufacturer SavantIC
Title 2SD2394
Description www.dat· package ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SB1565 PINNING PIN...
Features ge IC=50µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A ICBO Collector cut-off current VCB=60V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current ga...

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D2390 : 2SD2390Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 160 150 5 10 1 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=7A IC=7A, IB=7mA IC=7A, IB=7mA VCE=12V, IE=–2A VCB=10V, f=1MHz Ratings 100max 100max 150min 5000min∗ 2.5max 3.0max 55typ 95typ Unit µA µA V V V MHz pF ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000).

D2394 : 2SD2394 Transistors For Power Amplification (60V, 3A) 2SD2394 zStructure NPN Silicon Triple Diffused Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 10.0 4.5 φ3.2 2.8 14.0 zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Low frequency amplifier zComplements PNP 2SB1565 NPN 2SD2394 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 80 60 7 3 6 2 2.

D2395 : (94L-1101-D350) 296 DataSheet 4 U .com .

D2396 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2396 TRANSISTOR (NPN) TO – 220F FEATURES  Available in TO-220 F package  Darling connection provides high dc current gain (hFE)  Large collector power dissipation  Low frequency and Power amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature 1. BASE 123 2. COLLECTOR 3. EMITTER Value 80 60 6 3 2 62.5 150 -55~+150 Unit V V V A W ℃/W ℃.

D2396 : Transistors 2SD2396 2SC5060 (96-819-D351) (96-733-D416) 323 .

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