INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRFP360
FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.
2Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
400 ±20
V V
ID Drain Current-Continuous
23 A
IDM Drain Current-Single Pluse
92 A
PD Total Dissipation @TC=25℃
250 W
TJ
Max.
Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTER...