INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
KSD986
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.
5V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
150
V
80
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
1.
5
A
ICM
Collector Current-Pulse
3.
...