INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
KSD5013
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode
APPLICATIONS ·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
6
A
ICP Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
16 A 60 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.cn
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