INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
KSD5075T
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability
APPLICATIONS ·Electronic ballast applicaition ·High voltage switching applicaition
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
IC Collector Current- Continuous
6V 3.
5 A
ICP Collector Current-Peak Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
10 A 75 W 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website：www.
iscsemi.
cn
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INCHANGE Semiconductor
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