P-Channel Enhancement Mode MOSFET
STP2305
■DESCRIPTION
-30V P-Channel Enhancement Mode MOSFET
■FEATURE
The STP2305 is the P-Channel logic enhancement mode power field effect
transistor is produced using high cell density.
advanced trench technology to provide excellent RDS(ON).
.
low gate charge and operation gate as 2.
5V.
This device is suitable for use as a load switch or other general applications.
-30V/-4.
3A, RDS(ON) =55mΩ(typ.
)@VGS =-10V -30V/-3.
5A, RDS(ON) =65mΩ(typ.
)@VGS =-4.
5V -30V/-2.
5A, RDS(ON) =87mΩ(typ.
)@VGS =-2.
5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and Maximum DC
current capability
STP2305S-TRG ROHS Compliant This is...