N-Channel Enhancement Mode MOSFET
STN2306
30V N-Channel Enhancement Mode MOSFET
■DESCRIPTION
■FEATURE
The STN2306 is the N-Channel logic enhancement mode power field effect
transistor is produced using high cell density.
advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package.
30V/3.
6A, RDS(ON)= 45mΩ(typ.
)@VGS= 10V 30V/2.
8A, RDS(ON)= 55mΩ(typ.
)@VGS= 4.
5V Super high density cell design for extremely
low RDS(ON) Exceptional on-resistance and Maximum...