CEP4060A/CEB4060A
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 17A, RDS(ON) = 85mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
ID IDM
17 12 68
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
47 0.
4
Operating and Store Temperature Range
TJ,Tstg
-55 to ...