CEP4060AL/CEB4060AL
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 17A,RDS(ON) = 75mΩ @VGS = 10V.
RDS(ON) = 90mΩ @VGS = 5.
0V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM
PD
60
±20
17 12 68 43 0.
3
Operating and Store Temperature...