CEP7060R/CEB7060R
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 75A, RDS(ON) = 13mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
60
±20
75 225 150
1
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
EAS 250 IAS 100
Ope...