CEP740A/CEB740A CEF740A
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP740A CEB740A CEF740A
VDSS 400V 400V
400V
RDS(ON) 0.
55Ω 0.
55Ω
0.
55Ω
ID 10A 10A 10A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
VDS VGS
ID IDM e
400
±30
10 7.
4 40
10 d 7.
4 d 40 d
...