Part Number
|
IXFN100N65X2 |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Aug 16, 2016 |
Detailed Description
|
X2-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN100N65X2
D G S
S
...
|
Datasheet
|
IXFN100N65X2
|
Overview
X2-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN100N65X2
D G S
S
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL
Md
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C
50/60 Hz, RMS
t = 1 minute
IISOL 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
650 650
V V
30 V 40 V
78 A 200 A
15 A 3.
5 J
595 W
50 V/ns
-55 .
.
.
+150 150
-55 .
.
.
+150
C C C
2500 3000
V~ V~
1.
5/13 1.
3/11.
5
Nm/lb.
in Nm/lb.
in
30 g
Symbol
Test C...
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