NTE102 (
PNP) & NTE103 (
NPN) Germanium Complementary
Transistors
Power Output, Driver
Description: The NTE102 (
PNP) and NTE103 (
NPN) are Germanium complementary
transistors designed for medium–speed saturated switching applications.
Features:
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA
D High Emitter–Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
25V Collector–Emitter Voltage, VCES .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
...