INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
isc Product Specification
2SA940
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min) ·DC Current Gain
: hFE= 40-140@ IC= -0.
5A ·Complement to Type 2SC2073
APPLICATIONS ·Designed for use in general purpose power amplifier ,
vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage
IC Collector Current-Continuous ICM Collector Current-Peak
Total Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range
-150
V
-150
V
-5 V
-1.
5 A
-3.
0 A
25 W 150 ℃ -55~150 ℃
THE...