CEP703AL/CEB703AL
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
30V, 40A,RDS(ON) = 17mΩ @VGS = 10V.
RDS(ON) = 30mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
30
±20
40 120 50 0.
4
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
...