CEPF640/CEBF640 CEFF640
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEPF640 CEBF640 CEFF640
VDSS 200V 200V 200V
RDS(ON) 0.
15Ω 0.
15Ω 0.
15Ω
ID 19A
19A 19A d
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-220F full-pak for through hole.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ T...