CEDF630/CEUF630
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
200V, 7.
8A, RDS(ON) = 360mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G D S
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
200
±20
7.
8 31.
2 50 0.
33
Operating and Store Temperature Range
TJ,Tstg
-65 to 150
Thermal Characte...