EN27LN4G08 4 Gigabit (512M x 8), 3.
3 V NAND Flash Memory EN27LN4G08 Features • Voltage Supply: 2.
7V ~ 3.
6V • Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes • Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.
) - Serial Access : 25ns (Min.
) • Memory Cell: 1bit/Memory Cell • Fast Write Cycle Time - Page Program Time : 250µs (Typ.
) - Block Erase Time : 2ms (Typ.
) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - ECC R...

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