isc Silicon
NPN Transistor
DESCRIPTION ·High Voltage ·Excellent hFE linearity ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dsigned for use in driver stage of AF amplifier and low speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2SC945
VALUE
UNIT
60
V
50
V
5
V
100
mA
20
mA
250
mW
125
℃
-55~125
℃
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