Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd
2015
Single P-Channel, -20V, -2.
4A, Power MOSFET
VDS (V) -20
Rds(on) (ȍ) 0.
081@ VGS=4.
5V 0.
103@ VGS=2.
5V
Descriptions
The 2015 is P-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product 2015 is Pb-free and Halogen-free.
Features
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
...