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2016

N-Channel Enhancement Mode Field Effect Transistor

Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2016 2016 N-Channel Enhancement Mode Field Effect Transistor General Description The 2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V)...


Tuofeng Semiconductor

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