Part Number
|
CGY2010G |
Manufacturer
|
NXP |
Description
|
GSM 4W power amplifiers |
Published
|
Mar 23, 2005 |
Detailed Description
|
INTEGRATED CIRCUITS
DATA SHEET
CGY2010G; CGY2011G GSM 4 W power amplifiers
Objective specification Supersedes data of 1...
|
Datasheet
|
CGY2010G
|
Overview
INTEGRATED CIRCUITS
DATA SHEET
CGY2010G; CGY2011G GSM 4 W power amplifiers
Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
FEATURES • Power Amplifier (PA) overall efficiency 45% • 35.
5 dB gain • 0 dBm input power • Gain control range 55 dB • Integrated power sensor driver • Low output noise floor of PA −129 dBm/Hz in GSM RX band • Wide operating temperature range −20 to +85 °C • LQFP 48 pin package • Compatible with power ramping controller PCA5075 • Compatible with GSM RF transceiver SA1620.
APPLICATIONS • 880 to 915 MHz hand-held transceivers for E-GSM applic...
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