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Part Number
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CGY2013G |
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Manufacturer
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NXP |
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Description
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GSM 4W power amplifier |
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Published
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Mar 23, 2005 |
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Detailed Description
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INTEGRATED CIRCUITS
DATA SHEET
CGY2013G GSM 4 W power amplifier
Preliminary specification Supersedes data of 1996 Jul 1...
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Datasheet
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CGY2013G
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Overview
INTEGRATED CIRCUITS
DATA SHEET
CGY2013G GSM 4 W power amplifier
Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
FEATURES • Power Amplifier (PA) overall efficiency 52% • 35.
5 dB gain • 0 dBm input power • Gain control range 55 dB • Low output noise floor of PA −130 dBm/Hz in GSM RX band • Wide operating temperature range −20 to +85 °C • LQFP 48 pin package • Compatible with power ramping controller PCF5077 • Compatible with GSM RF transceiver SA1620.
APPLICATIONS • 880 to 915 MHz hand-held transceivers for E-GSM applications • 900 MHz Time Division Multiple A...
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