Part Number
|
CHA2291 |
Manufacturer
|
United Monolithic Semiconductors |
Description
|
10-18GHz Low Noise / Variable Gain Amplifier |
Published
|
Mar 23, 2005 |
Detailed Description
|
CHA2291
RoHS COMPLIANT
10-18GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA22...
|
Datasheet
|
CHA2291
|
Overview
CHA2291
RoHS COMPLIANT
10-18GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications, from military to commercial communication systems.
The backside of the chip is both RF and DC grounded.
This helps to simplify the assembly process.
The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Main Features
Frequency range: 10-18GHz 2.
2dB Noise Figure.
23dB gain Gain control range: 25dB DC power consumption: 180...
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