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Part Number
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CHA5010B |
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Manufacturer
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United Monolithic Semiconductors |
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Description
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X Band Driver Amplifier |
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Published
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Mar 23, 2005 |
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Detailed Description
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CHA5010b
X Band Driver Amplifier
GaAs Monolithic Microwave IC
Description
This CHA5010b is a two-stage monolithic driv...
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|
Datasheet
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CHA5010B
|
Overview
CHA5010b
X Band Driver Amplifier
GaAs Monolithic Microwave IC
Description
This CHA5010b is a two-stage monolithic driver amplifier.
The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Vg
Main Features
¦ Broadband performance : 9-10.
5GHz ¦ 27dBm output power
(pulsed meas.
, -1dB gain compression) ¦ 15dB gain ¦ ± 1.
5dB gain flatness ¦ Chip size : 2,09 x 1,27 x 0.
10 mm
IN
Vd OUT
Main Characteristics
Tamb.
= 25°C
Symbol
Parameter
Fop Operating frequency range
G Pout
Small signal gain
Output power (Pulsed meas.
, Pin = +13dBm)
Min Typ Max Unit
9 10.
5 GHz
14 15
dB
...
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