CHA7010
RoHS COMPLIANT
X-band GaInP HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications.
This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.
A nitride layer protects the
transistors and the passive components.
Special heat removal techniques are implemented to guarantee high reliability.
To simplify the assembly process: • the backside of the chip is both RF and
DC grounded • bond pads and back side are gold
plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.
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