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Part Number
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MTB2D5N03BE3 |
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Manufacturer
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Cystech Electonics |
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Description
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N-Channel Enhancement Mode Power MOSFET |
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Published
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Sep 4, 2016 |
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Detailed Description
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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB2D5N03BE3
Spec. No. : C998E3 Issued Date : 2016.08...
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Datasheet
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MTB2D5N03BE3
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Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB2D5N03BE3
Spec.
No.
: C998E3 Issued Date : 2016.
08.
01 Revised Date : Page No.
: 1/ 8
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.
5V, ID=20A
30V 111A(Si limit)
66A(PKG limit) 17.
5A 3.
5 mΩ(typ) 4.
6 mΩ(typ)
Symbol
MTB2D5N03BE3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device MTB2D5N03BE3-0-UB-X
Package
TO-220 (RoHS compliant)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade ...
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