Part Number
|
MTB50N10E3 |
Manufacturer
|
Cystech Electonics |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Sep 4, 2016 |
Detailed Description
|
CYStech Electronics Corp.
Spec. No. : C893E3 Issued Date : 2016.06.01 Revised Date : Page No. : 1/8
N-Channel Enhancem...
|
Datasheet
|
MTB50N10E3
|
Overview
CYStech Electronics Corp.
Spec.
No.
: C893E3 Issued Date : 2016.
06.
01 Revised Date : Page No.
: 1/8
N-Channel Enhancement Mode Power MOSFET
MTB50N10E3
BVDSS
Features
• Low Gate Charge • Simple Drive Requirement
ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
100V 29A
32mΩ (typ) 33mΩ (typ)
Symbol
MTB50N10E3
Outline
TO-220
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTB50N10E3-0-UB-X
Package
Shipping
TO-220 (Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant pro...
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