Part Number
|
MTE011N10RE3 |
Manufacturer
|
Cystech Electonics |
Description
|
N-Channel Enhancement Mode Power MOSFET |
Published
|
Sep 4, 2016 |
Detailed Description
|
CYStech Electronics Corp.
Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 1/ 8
N-Chan...
|
Datasheet
|
MTE011N10RE3
|
Overview
CYStech Electronics Corp.
Spec.
No.
: C169E3 Issued Date : 2015.
12.
04 Revised Date : 2016.
04.
27 Page No.
: 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE011N10RE3
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=11A
100V 58A
9A 11 mΩ(typ)
Symbol
MTE011N10RE3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTE011N10RE3-0-UB-X
Package
TO-220 (RoHS compliant)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound p...
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