High-power GaAs FET (small signal gain stage)
MGF1601B-01
S to X BAND / 0.
15W non - matched
DESCRIPTION
The MGF1601B-01, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and oscillators.
The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.
FEATURES
High linear power gain Glp=8.
0dB @f=8GHz
High P1dB P1dB=21.
8dBm(TYP.
) @f=8GHz
APPLICATION
S to X Band medium-power amplifiers and oscillators
QUALITY
GG
RECOMMENDED BIAS CONDITION
VDS=6V,Id=100mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO VGSO ID...