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Part Number
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MTB3N100E |
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Manufacturer
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ON Semiconductor |
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Description
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High Energy Power FET |
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Published
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Sep 17, 2016 |
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Detailed Description
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MTB3N100E
Designer’s™ Data Sheet
TMOS E−FET.™
High Energy Power FET D2PAK for Surface Mount
N−Channel Enhancement−Mod...
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Datasheet
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MTB3N100E
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Overview
MTB3N100E
Designer’s™ Data Sheet
TMOS E−FET.
™
High Energy Power FET D2PAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
http://onsemi.
com
TMOS POWER FET
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficie...
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