Advanced Technical Information IXKC 15N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge D G S ID25 = 15 A VDSS = 600 V RDS(on) max = 0.
165 Ω ISOPLUS220TM G D S E72873 q isolated back surface MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 7.
9 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0.
.
.
480 V Maximum Ratings 600 V ± 20 V 15 A 11 A 522 mJ 0.
79 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)