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Part Number
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SSPL50N30H |
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Manufacturer
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Silikron Semiconductor |
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Description
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N-Channel enhancement mode power field effect transistors |
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Published
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Sep 21, 2016 |
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Detailed Description
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Main Product Characteristics:
VDSS RDS(on)
300V 45mΩ(typ.)
ID 50A ①
Features and Benefits:
TO-247
Advanced MOSFE...
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Datasheet
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SSPL50N30H
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Overview
Main Product Characteristics:
VDSS RDS(on)
300V 45mΩ(typ.
)
ID 50A ①
Features and Benefits:
TO-247
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSPL50N30H
Marking and Pin Schematic Diagram
Assignment
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of...
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