Main Product Characteristics
VDSS RDS(on)
55V 7.
2mΩ(typ.
)
ID 110A
Features and Benefits
TO-220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSPL5508
Marking and Pin Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect
transistors are produced using silikron proprietary MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and c...