Part Number
|
SSS1004 |
Manufacturer
|
Silikron Semiconductor |
Description
|
N-Channel enhancement mode power field effect transistors |
Published
|
Sep 22, 2016 |
Detailed Description
|
Main Product Characteristics
VDSS RDS(on)
100V 3.7mΩ (typ.)
ID 180A ①
Features and Benefits
TO-220
Advanced Proc...
|
Datasheet
|
SSS1004
|
Overview
Main Product Characteristics
VDSS RDS(on)
100V 3.
7mΩ (typ.
)
ID 180A ①
Features and Benefits
TO-220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSS1004
Marking and pin Assignment
Schematic diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other a...
Similar Datasheet