Part Number
|
SSF2610E |
Manufacturer
|
Silikron Semiconductor |
Description
|
MOSFET |
Published
|
Sep 22, 2016 |
Detailed Description
|
DESCRIPTION
The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit...
|
Datasheet
|
SSF2610E
|
Overview
DESCRIPTION
The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
SSF2610E
GENERAL FEATURES
● VDS = 20V,ID = 8A RDS(ON) 23mΩ @ VGS=1.
8V RDS(ON) 18mΩ @ VGS=2.
5V RDS(ON) 14mΩ @ VGS=4.
5V
ESD Rating:2000V HBM
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Schematic diagram Marking and pin Assignment
Application
●Battery protection ●Load switch ●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2610E
SSF2610E
SOP-8
Ø330mm
Tape width 12mm
Quantity 3000 units
ABSOLUTE...
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