STP6506
Dual P Channel Enhancement Mode MOSFET
-2.
8A
DESCRIPTION
The STC6506 is the dual P-Channel enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
PIN CONFIGURATION TSOP-6
D1 S1 D2
06YW
FEATURE
◆ -30V/-2.
8A, RDS(ON)=105mohm@VGS=-10V ◆ -30V/-2.
5A, RDS(ON)=135mohm@VGS=-...