STN6303
Dual N Channel Enhancement Mode MOSFET
1.
0A
DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed.
PIN CONFIGURATION SOT-363 / SC70-6L
D1 G2 S2
53YW
FEATURE
23V/0.
5A, R =DS(ON) 400m-ohm@VGS =4.
5V 23V/0.
75A, RDS(ON) =550m-ohm@VGS =2.
5V Super high density cell design for e...