Applications
• W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Applications
QPD0030
45 W, DC to 4 GHz 48V GaN RF Power
Transistor
20 Pin 3x4mm QFN
Product Features
• Operating Frequency Range: DC to 4 GHz • Operating Drain Voltage: 48 V • Maximum Output Power (PSAT): 49 W • Maximum Drain Efficiency: 72.
5% • Efficiency-Tuned P3dB Gain: 21.
7 dB • Surface Mount Plastic Overmold package
Functional Block Diagram
General Description
The QPD0030 is a wide band over-molded QFN discrete power amplifier.
The device is a single stage unmatched power amplifier
transistor.
The QPD0030 can be used in Doherty architecture...