60 V, 57 A, 7.
0 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI06108 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 57 A  RDS(ON) ----------9.
2 mΩ max.
(VGS = 10 V, ID = 28.
5 A)  Qg------16.
9 nC (VGS = 4.
5 V, VDS = 30 V, ID = 28.
5 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
5 V Gate Drive  100 % UIL Tested  RoHS Compliant Package TO-220 (4) D (1) (2) (3) GDS Applications  DC-DC converters  Synchronous Rectification  Power Supplies Equivalent circuit D(2)(4) G(1) S(3) Not to scale Absolute Maximum Ratings  Unless otherwise specified, TA = 25 °C Param...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)