Part Number
|
UT8R512K8 |
Manufacturer
|
Aeroflex Circuit Technology |
Description
|
512K x 8 SRAM |
Published
|
Oct 4, 2016 |
Detailed Description
|
Standard Products
UT8R512K8 512K x 8 SRAM
Data Sheet March 2009 www.aeroflex.com/memories
FEATURES 15ns maximum acces...
|
Datasheet
|
UT8R512K8
|
Overview
Standard Products
UT8R512K8 512K x 8 SRAM
Data Sheet March 2009 www.
aeroflex.
com/memories
FEATURES 15ns maximum access time Asynchronous operation for compatibility with industry-
standard 512K x 8 SRAMs CMOS compatible inputs and output levels, three-state
bidirectional data bus
- I/O Voltage 3.
3 volts, 1.
8 volt core Operational environment:
- Intrinsic total-dose: 300K rad(Si)
- SEL Immune 100 MeV-cm2/mg - LETth (0.
25): 53.
0 MeV-cm2/mg - Memory Cell Saturated Cross Section 1.
67E-7cm2/bit - Neutron Fluence: 3.
0E14n/cm2
- Dose Rate
- Upset 1.
0E9 rad(Si)/sec
- Latchup 1.
0E11 rad(Si)/sec Packaging options:
- 36-lead ceramic flatpack (3.
762 grams) Standard Microcircuit Drawing 59...
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